Vapor deposition rate modifies anisotropic glassy structure of an anthracene-based organic semiconductor

TitleVapor deposition rate modifies anisotropic glassy structure of an anthracene-based organic semiconductor
Publication TypeJournal Article
Year of Publication2022
AuthorsBishop, Camille, Kushal Bagchi, Michael F. Toney, and M. D. Ediger
JournalThe Journal of Chemical Physics
Volume156
Start Page014504-1
Date Published01/2022
AbstractWe control the anisotropic molecular packing of vapor-deposited glasses of ABH113, a deuterated anthracene derivative with promise for future organic light emitting diode materials, by changing the deposition rate and substrate temperature at which they are prepared. We find that at substrate temperatures from 0.65 Tg to 0.92 Tg, the deposition rate significantly modifies the orientational order in the vapor-deposited glasses as characterized by x-ray scattering and birefringence. Both measures of anisotropic order can be described by a single deposition rate–substrate temperature superposition (RTS). This supports the applicability of the surface equilibration mechanism and generalizes the RTS principle from previous model systems with liquid crystalline order to non-mesogenic organic semiconductors. We find that vapor-deposited glasses of ABH113 have significantly enhanced density and thermal stability compared to their counterparts prepared by liquid-cooling. For organic semiconductors, the results of this study provide an efficient guide for using the deposition rate to prepare stable glasses with controlled molecular packing.
URLhttps://aip.scitation.org/doi/10.1063/5.0074092
DOI10.1063/5.0074092